Move the VBUS TVS diode and bypass caps and place copper pour on the...

Move the VBUS TVS diode and bypass caps and place copper pour on the respective pad areas, the VBUS rail has a 6mm wide fill zone in order to properly handle ~4.3A with a <10degreeC temperature rise (should also do this when bring VBUS to the charge controller), make the In4.Cu layer a solid ground layer

dvk-mx8m-bsb.lib

@@ -3221,7 +3221,7 @@ F1 "PTN36043BXY" 350 950 60 H V C CNN
 F2 "" 0 150 60 H I C CNN
 F3 "" 0 150 60 H I C CNN
 DRAW
-S 700 -800 -700 900 0 1 12 N
+S 700 -800 -700 900 0 1 0 N
 P 2 0 1 30 -300 100 -150 100 N
 P 2 0 1 30 -300 400 -150 400 N
 P 2 0 1 12 -100 -200 -250 -200 N

usb-c.sch

@@ -1080,9 +1080,9 @@ $EndComp
 Text Notes 8800 1500 0    236  ~ 47
 USB-C
 Text Notes 7400 4600 0    39   ~ 0
-RX1 lanes are swapped!\nIt is allowed by the USB 3.0 standart,\nsection 6.4.2. Lane Polarity Inversion
+RX1 lanes are swapped!\nIt is allowed by the USB 3.0 standard,\nsection 6.4.2. Lane Polarity Inversion
 Text Notes 7450 6200 0    39   ~ 0
-TX2 lanes are swapped!\nIt is allowed by the USB 3.0 standart,\nsection 6.4.2. Lane Polarity Inversion
+TX2 lanes are swapped!\nIt is allowed by the USB 3.0 standard,\nsection 6.4.2. Lane Polarity Inversion
 $Comp
 L USB-C_Receptacle J201
 U 1 1 5AE939ED